Ceramic capacitor and method of manufacturing same

ABSTRACT

In a ceramic capacitor according to the present invention, an interdiginated pair of internal electrodes are arranged, on a substrate, perpendicular to a surface of the substrate, and a ceramic dielectric member is filled into a gap between this pair of internal electrodes. For this reason, the dimensions of the internal electrodes do not substantially change before and/or after the formation of the ceramic dielectric member, whereby the dimensions formed at the time of internal electrode can be maintained. According to this ceramic capacitor, since the internal electrode dimensions can be easily controlled like this, dimensional control of internal electrode spacing can also be easily carried out.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a ceramic capacitor that is formed on a substrate, and a method of manufacturing same.

2. Related Background Art

In the past, a stacked ceramic capacitor has been known as one of ceramic capacitors. Such a stacked ceramic capacitor 1 has a structure as shown in FIG. 23, and is configured in accordance with a stacked member 6 in which some ceramic dielectric layers 2 and some internal electrode layers 4 are alternately stacked in a up-down direction, and a pair of electrodes 8A, 8B that are formed so as to sandwich this stacked member 6 laterally. Furthermore, regarding the internal electrode layers 4 of this capacitor 1, any two adjacent internal electrode layers 4 are connected to different electrodes 8A, 8B as shown FIG. 23B in detail.

As a method of manufacturing the stacked ceramic capacitor described above, a sheet method and a print method are known. Both of these manufacturing methods manufacture a stacked ceramic capacitor by the method comprises steps of, forming a stacked member in which layers consisting of a ceramic dielectric powder that configure dielectric layers and layers consisting of an electrode paste (a conductive paste) that configure internal electrode layers are alternately stacked in a plurality of layers, and providing external electrodes subsequent to baking this stacked member.

In forming these dielectric layers, a ceramic compact (a so-called green sheet), which is manufactured by mixing together a ceramic dielectric powder, an organic binder and an organic solvent to create a slurried dielectric paste, making this dielectric paste into a sheet shape using a doctor blade method or the like, and suitably drying the green sheet, is utilized. On the other hand, the electrode paste utilized in forming the internal electrode layers is made into a paste by dispersing nickel or another such metallic powder into an organic binder and an organic solvent.

Then, the stacked ceramic capacitor is manufactured normally by the method comprises steps of, screen printing the electrode paste onto the surface of the green sheet, drying off the organic solvent included in the electrode paste, overlapping the plurality of compacts and pressing that, chipping and baking the stacked member produced by the overlapped compacts. The plurality of internal electrode layers is exposed at the lateral face of the chipped stacked member, and the external electrode is formed on the lateral face of the stacked member so as to electrically connect these internal electrode layers.

According to the progress toward smaller, thinner, more lightweight electronic devices in recent years, the stacked ceramic capacitor mentioned above is needed to be further smaller, moreover, the ceramic dielectric layers and internal electrode layers of these capacitors are required to be as thin as possible (made low profile), and stacked as many of these layers as possible (multi-layered) from the standpoint of higher capacity.

SUMMARY OF THE INVENTION

However, the conventional ceramic capacitor described above suffers from the following problems. That is, the manufacturing process comprises a process for pressure forming the stacked member of green sheets that constitutes the ceramic dielectric layers, and a process for baking this stacked member, thereby readily causing big changes to occur in the thickness dimensions of the ceramic dielectric layers, making it difficult to precisely control this thickness dimension. That is, because it is not possible to precisely control the dimensions of the intervals between the internal electrode layers, variations in capacitance and other such device characteristics occur.

An object of the present invention, which has been devised to resolve the above-mentioned problems, is to provide a ceramic capacitor and a method of manufacturing same with facile dimensional control of internal electrode spacing.

A ceramic capacitor related to the present invention comprises a pair of first internal electrodes, which are arranged, on a substrate, perpendicularly to a surface of the substrate, and which interdigitate via a prescribed gap; a first ceramic dielectric member, which fills the gap between the pair of first internal electrodes; and a pair of external electrodes, which are connected to the pair of first internal electrodes.

In this ceramic capacitor, the interdigitated pair of internal electrodes are arranged, on the substrate, perpendicularly to the surface of the substrate, and the ceramic dielectric member fills up the gap between this pair of internal electrodes. For this reason, the dimensions of the internal electrode do not substantially change before and after the ceramic dielectric member is formed, thereby maintaining the dimensions at the time the internal electrode was formed. Accordingly, since it is possible to easily control the dimensions of the internal electrode in accordance with this ceramic capacitor, it is also possible to readily carry out dimensional control of the internal electrode spacing.

Additionally, the mode may also be such that this ceramic capacitor further comprises an insulation layer that is formed on the first internal electrode; a pair of second internal electrodes, which are perpendicularly arranged, on the insulation layer, perpendicularly to the surface of the substrate, and which interdigitate by way of a prescribed gap; and a second ceramic dielectric member, which fills in the gap between the pair of second internal electrodes, and one of the pair of external electrodes is connected to the first internal electrodes and the other one of the pair of external electrodes is connected to the second internal electrodes. Increased capacitance is achieved in accordance with this.

Further, the mode may also be such that this ceramic capacitor comprises a plurality of structural members including an insulation layer, the second internal electrodes and a second ceramic dielectric member. Even higher capacitance is achieved in accordance with this.

Further, the mode of this ceramic capacitor may also be such that an interdigitated branch part, which extends from one of the pair of internal electrodes toward the other one of the pair of internal electrodes, is formed on mutually opposing surfaces of the pair of internal electrodes. Since the areas of the opposing surfaces of the pair of internal electrodes are enlarged in accordance with this, increased capacitance is achieved.

A ceramic capacitor manufacturing method related to the present invention comprises a step of forming a first thick-film masking layer of a prescribed pattern on the surface of the substrate on which a first seed layer is formed; a step of plating the first seed layer and forming, on a portion of the first seed layer that has been exposed from the first thick-film mask, an interdigitated pair of first internal electrodes extending in a thickness direction of the substrate; a step of removing the first thick-film mask; a step of filling the first ceramic dielectric member into the gap between the pair of first internal electrodes formed by removing the first thick-film mask; and a step of forming a pair of external electrodes, which are connected to the pair of first internal electrodes.

In this ceramic capacitor manufacturing method, a pair of internal electrodes are formed by plating the top of the substrate, and the ceramic dielectric member is filled into the gap between this pair of internal electrodes. For this reason, the dimensions of the internal electrode do not substantially change before and after the ceramic dielectric filling step, thereby maintaining the dimensions at the time the internal electrode was formed. Accordingly, since it is possible to easily control the dimensions of the internal electrode in accordance with this ceramic capacitor manufacturing method, it is also possible to readily carry out dimensional control of the internal electrode spacing.

Further, the mode may be such that, this manufacturing method further comprises, subsequent to the step of filling the first ceramic dielectric into the gap between the pair of first internal electrodes, a step of sequentially forming an insulation layer, a second seed layer and a second thick-film masking layer of a prescribed pattern on the first internal electrodes; a step of plating the second seed layer and forming, on a portion of the second seed layer that is exposed through the second thick-film mask, an interdigitated pair of second internal electrodes extending substantially perpendicularly to the surface of the substrate; a step of removing the second thick-film mask; and a step of filling the second ceramic dielectric member into the gap between the pair of second internal electrodes formed by removing the second thick-film mask, and a pair of external electrodes are formed so as to be connected to the first internal electrodes and the second internal electrodes. Increased capacitance is achieved in accordance with this.

Further, the mode may also be such that this manufacturing method wherein the step of sequentially forming an insulation layer, a second seed layer and a second thick-film masking layer of a prescribed pattern, the step of forming the second internal electrodes, the step of removing the second thick-film mask, and the step of filling the second ceramic dielectric member into the gap between the pair of second internal electrodes are repeated a plurality of times to achieve multi-layering. Higher capacitance is achieved in accordance with this.

Further, the mode may be such that the plating material used in the step of forming the internal electrodes is any of Ni, Cu, Cr and Ru.

The mode may also be such as to further comprise a step of increasing the width of the internal electrodes. Since this makes the spacing of the internal electrode narrower, an increase in capacitance is achieved. Furthermore, the mode may also be such that, as the step of increasing the width of the internal electrodes, the seed layer material exposed in the gap between the internal electrodes is reattached to sides of the internal electrodes by ion-beam etching, or the internal electrodes are re-plated.

Further, the mode may also be such that an interdigitated branch part, which extends from one of the pair of internal electrodes toward the other one of the pair of internal electrodes, is formed on mutually opposing surfaces of the pair of internal electrodes. Since the areas of the opposing surfaces of the pair of internal electrodes are enlarged in accordance with this, increased capacitance is achieved. In addition to this, the orientation stability of the internal electrode is enhanced subsequent to removing the thick-film mask.

According to the present invention, a ceramic capacitor and a method of manufacturing same with facile dimensional control of internal electrode spacing are provided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing one process of a ceramic capacitor manufacturing method related to a first embodiment;

FIG. 2 is a diagram showing one process of a ceramic capacitor manufacturing method related to the first embodiment;

FIG. 3 is a diagram showing one process of a ceramic capacitor manufacturing method related to the first embodiment;

FIG. 4 is a diagram showing one process of a ceramic capacitor manufacturing method related to the first embodiment;

FIG. 5 is a plan view showing a pattern of an internal electrode of the ceramic capacitor related to the first embodiment;

FIG. 6 is an enlarged view of the essential element of the internal electrode pattern of FIG. 5;

FIG. 7 is a diagram showing one process of a ceramic capacitor manufacturing method related to the first embodiment;

FIG. 8 is a diagram showing one process of a ceramic capacitor manufacturing method related to the first embodiment;

FIG. 9 is a diagram showing one process of a ceramic capacitor manufacturing method related to the first embodiment;

FIG. 10 is a diagram showing one process of a ceramic capacitor manufacturing method related to the first embodiment;

FIG. 11 is a simplified block diagram of a ceramic capacitor related to the first embodiment;

FIG. 12 is a diagram showing a different mode of ceramic capacitor manufacturing method;

FIG. 13 is a simplified block diagram of a ceramic capacitor related to a second embodiment;

FIG. 14 is a diagram showing one process of a ceramic capacitor manufacturing method related to the second embodiment;

FIG. 15 is a plan view showing a first internal electrode pattern of a ceramic capacitor related to the second embodiment;

FIG. 16 is a diagram showing one process of a ceramic capacitor manufacturing method related to the second embodiment;

FIG. 17 is a diagram showing one process of a ceramic capacitor manufacturing method related to the second embodiment;

FIG. 18 is a diagram showing one process of a ceramic capacitor manufacturing method related to the second embodiment;

FIG. 19 is a diagram showing one process of a ceramic capacitor manufacturing method related to the second embodiment;

FIG. 20 is a plan view showing the pattern of a second internal electrode of the ceramic capacitor related to the second embodiment;

FIG. 21 is a diagram showing a state in which the second, internal electrode overlaps the first internal electrode pattern of the ceramic capacitor related to the second embodiment;

FIG. 22 is a diagram showing one process of the ceramic capacitor manufacturing method of the second embodiment; and

FIG. 23 is a diagram showing a ceramic capacitor related to the prior art.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The embodiments for working the present invention will be explained in detail while referring to the attached drawings. Furthermore, the same reference numerals will be assigned to identical or equivalent elements, and redundant explanations will be omitted.

First Embodiment

When manufacturing a ceramic capacitor related to the first embodiment of the present invention, first, as shown in FIG. 1, an Al₂O₃ insulation layer 12, Ni seed layer (first seed layer) 14, and thick-film photoresist masking layer 16 are sequentially stacked on top of a substrate 10 (for example, a silicon substrate). The seed layer 14 is 1000 Å thick, and the masking layer 16 is 6 μm thick.

Next, as shown in FIG. 2, patterning of the masking layer 16 is carried out using a known photoresist technique to form a thick-film mask (first thick-film mask) 17. The thick-film mask 17 comprises a plurality of mask strips 17 a between 0.4 and 0.6 μm wide extending perpendicularly relative to the surface of the substrate 10, and, for example, this plurality of mask strips 17 a is arranged regularly at clearances of between 0.6 and 0.8 μm.

Then, as shown in FIG. 3, Ni plating of the seed layer 14 is carried out to form a plated layer 18A. This plated layer 18A is formed 5.5 μm thick, and the top of the mask strip 17 a is exposed above the surface of the plated layer 18A. The plated layer 18A is formed over the entire remaining area of the area in which the mask strips 17 a have been formed, and the plated fills in the gap between adjacent mask strips 17 a.

Next, as shown in FIG. 4, the thick-film mask 17 is removed to produce internal electrodes 18 a, 18 b, 18 c. These internal electrodes 18 a, 18 b, 18 c comprise a plurality of electrode strips 19 formed in the gap between the adjacent mask strips 17 a. Each electrode strip 19 is arranged in a standing condition so as to extend perpendicularly relative to the surface of the substrate 10 the same as the mask strips 17 a.

The pattern of the internal electrodes 18 a, 18 b, 18 c will be explained here while referring to FIG. 5.

As described hereinabove, the internal electrodes 18 a, 18 b, 18 c are formed by patterning a plated layer 18A in accordance with the thick-film mask 17, and, consequently, the internal electrode constitutes, as shown in FIG. 5, opposing comb-like shapes that interdigitate with one another.

Specifically, the internal electrode 18 b has a plurality of electrode strips 19 of uniform length parallelly lined up in the up-down direction in FIG. 5, and constitutes an interdigitated electrode pattern that is integrally connected at the respective end parts thereof (the right end part in FIG. 5). The internal electrode 18 a also has a plurality of electrode strips 19 of uniform length parallelly lined up in the up-down direction in FIG. 5, and the electrode strips 19 of internal electrode 18 a and the electrode strips 19 of internal electrode 18 b are lined up in parallel via a groove-shaped gap G (for example, 0.5 μm wide) to be filled with a ceramic dielectric member that will be explained hereinbelow. The plurality of electrode strips 19 of internal electrode 18 a constitutes an interdigitated electrode pattern that is integrally connected at the respective end parts thereof (the left end part in FIG. 5), and, in addition, are formed so as to surround internal electrode 18 b. Consequently, the periphery of internal electrode 18 b is completely surrounded by the above-mentioned gap, and this gap itself forms a closed circuit. Internal electrode 18 c is arranged to the right side of internal electrode 18 a via a vertically extending groove-shaped gap g, and extends in the up-down direction.

As for the above-described internal electrodes 18 a, 18 b, 18 c, internal electrode 18 a is differentiated from the interconnected internal electrodes 18 b and 18 c in a subsequent stage process. Overall, the internal electrodes 18 a, 18 b, 18 c configure a pair of internal electrodes, the one side of which functions as an anode 18 a, and the other side of which functions as a cathode 18 b, 18 c.

Furthermore, the widths of the respective electrode strips 19 of internal electrodes 18 a, 18 b do not necessarily have to be made uniform, and can intentionally be made non-uniform for the purpose of adjusting the current density flowing inside the electrode or other such characteristics. For example, an electrode strip 19 of a maximum width dimension of between 2.0 and 5.0 μm may coexist with an electrode strip 19 of a minimum width dimension of between 0.6 and 0.8 μm. Furthermore, Deep-UV exposure may be used to realize a depth of 5 nm, a width of between 0.6 and 0.8 μm, and plated layer spaces of between 0.4 and 0.6 μm.

Microscopically speaking, the shape of the above-described electrode strip 19 is as shown in FIG. 6. That is, 5 μm-long branch parts 19 a, which parallelly extend from the electrode strip 19 of the one side of the pair of internal electrodes 18 a, 18 b, 18 c (for example, the anode 18 a) to the electrode strip 19 of the other side (for example, the cathode 18 b, 18 c), are formed on mutually opposing surfaces of adjacent electrode strips 19. These branch parts 19 a also interdigitate. Forming branch parts 19 a like this increases the surface area of the electrode strips 19. In addition, when electrode strips 19 of relatively high heights are perpendicularly arranged in a standing condition as shown in FIG. 4, these electrode strips 19 are apt to detach, or collapse and peel off when the thick-film mask 17 is removed, but enhancing orientation stability by providing branch parts 19 a to the electrode strips 19 makes it possible to effectively prevent the above situation.

Next, as shown in FIG. 7, a Ni ion beam is irradiated onto the plated layer 18A. This ion beam is irradiated perpendicularly (that is, at an angle inclination of 0 degrees) relative to the substrate surface, and the exposed portions of the seed layer 14 in the gaps G, g included between the internal electrodes 18 a, 18 b, 18 c are removed via etching. This portion of the seed layer 14 is removed in accordance with this ion beam etching (IBE), and the internal electrodes 18 a, 18 b, 18 c are electrically insulated from one another at this time. Furthermore, the Ni atoms of the seed layer 14 that are blown off (that is, sputtered) by this ion beam etching reattach to the sides of the electrode strips 19 surrounding this portion of the seed layer 14. In this way, for example, a 0.1 μm-thick reattached part 19 b is formed on the electrode strips 19, and the width of the electrode strips 19 increases by the size of this reattached part 19 b. In the meantime, since the sides of the electrode strips 19 on both sides of the gap G that is interposed between the electrode strips 19 draw closer to one another, the gap becomes narrower by the size of this reattached part 19 b. For example, in a case where the width of the gap G (that is, the clearance between the electrode strips 19) is 0.5 μm, forming a 0.1 μm-thick reattached part 19 b on the electrode strips 19 narrows the gap G by 0.2 μm, resulting in a gap G that is 0.3 μm wide.

Furthermore, the pointed top edges of the electrode strips 19 are rounded off by the above-mentioned ion beam etching, thereby also achieving an effect by which field convergence is alleviated when the capacitor is operating.

Next, a dielectric slurry is applied using a spin-coating process so as to cover the entire surface of the plated layer 18A. A BaTiO₃ SOG (Spin On Glass) slurry is used as this slurry. The BaTiO₃ SOG slurry, for example, is made by using any of a solid phase method, oxalic acid, hydrothermal, or sol-gel process to form a fine BaTiO₃ powder, and dissolving this powder in alcohol. By spin-coating this slurry, the dielectric slurry is filled into the narrow gap G between the electrode strips 19 of the internal electrodes 18 a, 18 b. Because the gap G between the internal electrodes 18 a, 18 b constitutes a closed circuit as described above, the dielectric slurry is accumulated inside the gap G, and leakage of the dielectric slurry outside of the gap is prevented. By contrast, since the gap g between internal electrode 18 a and internal electrode 18 c is not a closed circuit, the dielectric slurry does not accumulate inside this gap g.

The BaTiO₃ powder used in the SOG slurry of this embodiment was synthesized using the sol-gel process. This sol-gel process normally describes a liquid-phase synthesis method that uses an alkoxide hydrolysis reaction. This is advantageous in that, since the reaction is carried out-inside the alcohol solution, the hydroxyl group is not likely to be captured inside the crystal, making it possible to obtain a high quality BaTiO₃ powder. The BaTiO₃ nano-powder actually synthesized was configured from high-crystalline particles of around 5 nm, and low-crystalline particles of around 3 nm.

Then, the above-described dielectric slurry is hardened via heat processing (annealing) at approximately 800° C. As a result of this, as shown in FIG. 8, a dielectric thin-film 20 having a thickness of 500 nm is formed on the surface of the plated layer 18A, and a ceramic dielectric member (a first ceramic dielectric member) 21 comprising dielectric strips 21 a formed in the gap G between the electrode strips 19 is formed. That is, dielectric strips 21 a of a ceramic dielectric member 21 are interposed between the adjacent electrode strips 19 of the pair of internal electrodes 18 a, 18 b, 18 c, and the electrode strips 19 and dielectric strips 21 a alternately overlap in the surface direction of the substrate 10. Furthermore, as described hereinabove, since the dielectric slurry does not exist in the gap g between internal electrode 18 a and internal electrode 18 c, the gap g remains empty as-is even after the heat treatment.

Furthermore, even in a case where, for example, a small amount of bubbles is generated and the dielectric slurry does not completely fill up the gap G between the electrode strips 19, the insulation of the electrode strips 19 is realized by the air inside the bubbles. For this reason, even when insufficient filling of the dielectric slurry occurs, this has substantially no impact on the characteristics of the ceramic capacitor 1A that is manufactured.

Thereafter, the dielectric thin-film 20 formed on the surface of the plated layer 18A is removed. Furthermore, this process may be omitted, and processing may proceed to the subsequent stage process leaving the dielectric thin-film 20 as-is.

Next, as shown in FIG. 9, an Al₂O₃ insulation layer 22 having a thickness of between 0.2 and 0.5 μm is formed on the plated layer 18A comprising the internal electrodes 18 a, 18 b, 18 c. The Al₂O₃ is filled into the gap g between internal electrode 18 a and internal electrode 18 c at this time. Furthermore, subsequent to forming a prescribed through hole in the insulation layer 22, a conductor D like that shown in FIG. 10 is formed, and internal electrode 18 b and internal electrode 18 c, which function as the cathode, are connected by way of this conductor D. Furthermore, subsequent to forming the conductor D, an Al₂O₃ insulation layer 23, which integrally covers insulation layer 22 and conductor D, is formed.

In actuality, a plurality of stacked members having the same structure as the structure of the stacked member L produced through the processes explained above is parallelly formed on a single substrate. For this reason, at the time when the insulation layer 23 is formed, the stacked member L is linked on both sides to similarly structured stacked members L1, L2 on top of a single substrate 10.

Accordingly, cutting both ends of stacked member L together with the substrate 10 exposes the end faces of the internal electrodes 18 a, 18 b, 18 c at the respective end faces (cutting faces) S1, S2 on opposite sides of stacked member L. That is, the end face of internal electrode 18 a is exposed at the one end face S1 of the stacked member L, and the end face of internal electrode 18 c is exposed at the other end face S2 of the stacked member L.

Finally, as shown in FIG. 11, a pair of external electrodes 24A, 24B are formed so as to connect to the pair of internal electrodes 18 a, 18 b, 18 c, completing the manufacture of the ceramic capacitor 1A related to the first embodiment. Of the pair of external electrodes 24A, 24B, external electrode 24A, which functions as the anode, is formed by plating the end face S1 of the stacked member L, and is electrically connected to the anode 18 a. Conversely, external electrode 24B, which functions as the cathode, is formed by plating the end face S2 of the stacked member L, is electrically connected to internal electrode 18 c, and achieves conduction with cathode 18 b, 18 c.

A ceramic capacitor 1A manufactured in accordance with the above manufacturing method will be explained below.

The ceramic capacitor 1A, as described hereinabove, comprises an interdigitated pair of internal electrodes 18 a, 18 b, 18 c perpendicularly arranged in a standing condition relative to the surface of substrate 10, and a ceramic dielectric member 21 is filled into the gap G between this pair of internal electrodes 18 a, 18 b, 18 c. For this reason, the internal electrodes 18 a, 18 b, 18 c and the ceramic dielectric member 21 extend orthogonally relative to the surface of the substrate 10, and the electrode strips 19 of the internal electrodes 18 a, 18 b, 18 c are parallelly lined up in a parallel direction relative to this substrate surface. Therefore, in this ceramic capacitor 1A, enhanced mechanical strength relative to the stress in the thickness direction thereof is realized. By contrast, the stacked ceramic capacitor 1 of FIG. 23, which is related to the prior art, incurs damage such as cracking and breaking when stress is applied in the thickness direction thereof due to the thinning of the ceramic dielectric member 2 and the internal electrode layer 4. That is, because the mechanical strength of ceramic capacitor 1A in the thickness direction is enhanced compared to that of the prior art, damage like this is significantly reduced.

Further, in the ceramic capacitor 1A, the electrode strips 19 of the internal electrodes 18 a, 18 b, 18 c and the dielectric strips 21 a of the ceramic dielectric member 21 are perpendicularly arranged in a standing condition relative to the surface of the substrate 10, such that a plurality of electrode strips 19 and a plurality of dielectric strips 21 a are alternately arranged in the parallel direction relative to the substrate surface. That is, the electrode strips 19 and the dielectric strips 21 a are arranged in multiple layers in the parallel direction relative to the substrate surface. For this reason, the multi-layering of the ceramic capacitor is readily realized in accordance with known patterning techniques. By contrast, in order for the stacked ceramic capacitor 1 of FIG. 23 related to the prior art to realize multi-layering, green sheets onto which an electrode paste has been applied must be repeatedly stacked on top of one another many times, requiring lots of work and time. That is, the multi-layering of the ceramic capacitor 1A may be performed more easily than in the prior art.

Furthermore, when manufacturing the ceramic capacitor 1A, a pair of internal electrodes 18 a, 18 b, 18 c are formed in accordance with plating the top of the substrate 10, and a ceramic dielectric member 21 is filled into the gap G between this pair of internal electrodes 18 a, 18 b, 18 c. In other words, a process for pressure forming a green sheet stacked member and a process for baking this stacked member, which were required in the prior art, are not included in this manufacturing process. For this reason, big changes in the width dimensions of the ceramic dielectric member 21 are less likely to occur in this manufacturing process, and the thickness dimensions thereof are precisely controlled. Further, the internal electrodes 18 a, 18 b, 18 c are able to be formed with a high degree of precision, and the dimensions thereof are maintained until the manufacturing process ends. In other words, manufacturing the ceramic capacitor 1A in accordance with the above-described manufacturing method makes it possible to easily control the dimensions of the ceramic dielectric member 21 and the internal electrodes 18 a, 18 b, 18 c, thereby also making it possible to easily perform dimensional control for the gap G between the internal electrodes 18 a, 18 b, 18 c. As a result of this, uniformity of device characteristics, such as capacitance, is achieved.

In addition, the internal electrodes 18 a, 18 b, 18 c of the ceramic capacitor 1A are arranged perpendicularly in a standing condition relative to the surface of the substrate 10, and a plurality of electrode strips 19 is each interdiginately cast. Then, after arranging these internal electrodes 18 a, 18 b, 18 c in a standing condition, the end faces of the respective internal electrodes 18 a, 18 c thereof are exposed, and a pair of external electrodes 24A, 24B are formed on the exposed end faces. Forming the external electrodes 24A, 24B on the end faces of the internal electrodes 18 a, 18 c subsequent to exposing these end faces like this makes it possible to reliably and easily form the external electrodes 24A, 24B. In the stacked ceramic capacitor 1 of FIG. 23 related to the prior art, in a case where the external electrodes 8A, 8B are not reliably connected to the plurality of internal electrode layers 4, the unconnected internal electrode layers 4 do not function as a capacitor, thereby causing a drop in capacitance across the entire device. Making the internal electrode layers 4 thinner and multi-layered has made it difficult to reliably connect all of the internal electrode layers 4 to the external electrodes 8A, 8B. That is, manufacturing the ceramic capacitor 1A in accordance with the above-described manufacturing method makes it possible to reliably and easily form the external electrodes 24A, 24B.

Furthermore, among the above-described manufacturing processes, the following method may be used at the time of the process for increasing the width of the electrode strips 19 of the internal electrodes 18 a, 18 b. That is, as shown in FIG. 12, a Ni re-plating process is carried out subsequent to insulating the respective internal electrodes 18 a, 18 b, 18 c of the plated layer 18A in accordance with ion bean etching. Consequently, a re-plated layer of a prescribed thickness (for example, 0.1 μm) is formed on the sides of the gaps G, g between the internal electrodes 18 a, 18 b, 18 c, and on the surfaces of the internal electrodes 18 a, 18 b, 18 c. This forms electrode strips 19A, the widths of which have been widened by a re-plated layer having been formed on the upper end faces and sides of the internal electrodes 18 a, 18 b, 18 c. The thickness of this re-plated layer may be freely adjusted by adjusting plating time.

Second Embodiment

Next, a ceramic capacitor 1B related to a second embodiment of the present invention will be explained. This ceramic capacitor 1B, as shown in FIG. 13, constitutes a two-tiered ceramic capacitor comprising internal electrodes 18 a, 18 b, 18 c in the first tier, and internal electrodes 38 a, 38 b, 38 c in the second tier.

The steps for manufacturing the ceramic capacitor 1B will be explained below.

When manufacturing ceramic capacitor 1B, first, patterned internal electrodes 18 a, 18 b, 18 c are formed on top of a substrate 10 in accordance with the same steps as those in the first embodiment. That is, subsequent to sequentially layering a Al₂O₃ insulation layer 12, a Ni seed layer (first seed layer) 14, and a thick-film photoresist masking layer 16 on top of the substrate 10, masking layer 16 patterning is carried out using a known photoresist technique to form a thick-film mask 17. Then, subsequent to carrying out the Ni plating of the seed layer 14 to form a plated layer 18B, the thick-film mask 17 is removed to produce internal electrodes 18 a, 18 b, 18 c of a prescribed pattern.

The pattern of the internal electrodes 18 a, 18 b, 18 c in the second embodiment is as shown in FIG. 15. In other words, the pattern of the second embodiment differs from the pattern of the first embodiment in that a pair of connection areas 50 a, 50 b have been formed. The pair of connection areas 50 a, 50 b are arranged by being separated to the left and right of the plated layer 18B so as to sandwich the interdiginated pattern, and the one of the connection areas 50 a is disposed in internal electrode 18 a, and the other of the connection areas 50 b is disposed in internal electrode 18 b.

Next, as shown in FIG. 16, ion beam etching, the application of the dielectric slurry, a thermosetting annealing treatment and the formation of an insulation layer 22 are carried out in accordance with the same steps as in the first embodiment. Furthermore, since the thermosetting annealing treatment for the dielectric slurry is carried out in a subsequent process in this embodiment, the thermosetting annealing treatment may be omitted at this time.

Thereafter, as shown in FIG. 17, through holes 22 a are formed in the insulation layer 22 in the areas corresponding to connection areas 50 a, 50 b on the upper surface of the plated layer 18B. Next, as shown in FIG. 18, a Ni seed layer (second seed layer) 34 is formed on top of the insulation layer 22, and a thick-film mask (second thick-film mask) 37 is formed and patterned using a thick-film photoresist masking layer (not shown in the drawing) on top of this seed layer 34. This thick-film mask 37 comprises a plurality of mask strips 37 a extending perpendicularly to the substrate surface the same as the thick-film mask 17.

Then, the Ni plating of the seed layer 34 is carried out to form a plated layer 38. This plated layer 38 is formed such that the tops of the mask strips 37 a are exposed at the surface of the plated layer 38 the same as plated layer 18A. The plated layer 38 is formed over the entire remaining area of the area in which the mask strips 37 a have been formed, and the plating fills in the gap between adjacent mask strips 37 a.

Then, as shown in FIG. 19, the thick-film mask 17 is removed to produce internal electrodes 38 a, 38 b, 38 c. These internal electrodes 38 a, 38 b, 38 c comprise a plurality of electrode strips 39 formed in the gap between the adjacent mask strips 37 a. Each electrode strip 39 is arranged in a standing condition so as to extend perpendicularly relative to the surface of the substrate 10 the same as the mask strips 37 a.

The pattern of the internal electrodes 38 a, 38 b, 38 c will be explained here while referring to FIG. 20.

As described hereinabove, the internal electrodes 38 a, 38 b, 38 c are shape-formed by patterning the plated layer 38 in accordance with the thick-film mask 37, and, consequently, the internal electrode constitutes opposing comb-like shapes that interdigitate as shown in FIG. 20.

Specifically, internal electrode 38 a has a plurality of electrode strips 39 of uniform length lined up parallelly in the up-down direction in FIG. 20, and constitutes an interdiginated electrode pattern integrally connected at the respective end parts (the left side end parts in FIG. 20) thereof. Internal electrode 38 b also has a plurality of electrode strips 39 of uniform length lined up parallelly in the up-down direction in FIG. 20, and the electrode strips 39 of internal electrode 38 a and the electrode strips 39 of internal electrode 38 b are lined up in parallel via groove-shaped gap G, which is to be filled up with a ceramic dielectric. The plurality of electrode strips 39 of internal electrode 38 b constitutes an interdiginated electrode pattern that is integrally connected at the respective end parts thereof (the right side end parts in FIG. 20), and, in addition, is formed so as to surround internal electrode 38 a. Consequently, the periphery of internal electrode 38 a is completely surrounded by the above-mentioned gap, and this gap itself forms a closed circuit. Internal electrode 38 c is arranged to the left side of internal electrode 38 b via a vertically extending groove-shaped gap g, and extends in the up-down direction.

Overall, the internal electrodes 38 a, 38 b, 38 c described hereinabove configure a pair of internal electrodes, in which internal electrode 38 a functions as the anode, and internal electrodes 38 b functions as the cathode.

The same connection areas 50 a, 50 b in the areas corresponding to connection areas 50 a, 50 b of the first-tier of internal electrodes 18 a, 18 b, 18 c are disposed in the internal electrodes 38 a, 38 b, 38 c. Connection area 50 a is disposed in internal electrode 38 a, and connection area 50 b is disposed in internal electrode 38 b. Therefore, a plated layer 38 is formed, and as shown in FIG. 21 in a case where the first-tier of internal electrodes 18 a, 18 b, 18 c and the second-tier of internal electrodes 38 a, 38 b, 38 c overlap, the first-tier of internal electrode 18 a and the second-tier of internal electrode 38 a are electrically connected, and the first-tier internal electrode 18 b and the second-tier internal electrode 38 b are electrically connected by way of the connection areas 50 a, 50 b.

The mode may be such that the shape of the above-mentioned electrode strip 39 is the same as the shape of the electrode strip 19 explained in the first embodiment, and branch parts, which parallelly extend from the one electrode strip 39 to the other electrode strip 39, are formed on mutually opposing surfaces of adjacent electrode strips 39.

As shown in FIG. 19, the same as in the first embodiment, a Ni ion beam is also irradiated onto the plated layer 38, and the exposed portions of the seed layer 34 are removed via etching from the gaps G, g included between the internal electrodes 38 a, 38 b, 38 c. This portion of the seed layer 34 is removed in accordance with this ion beam etching, and the internal electrodes 38 a, 38 b, 38 c are electrically insulated from one another at this time. Furthermore, the Ni atoms of the seed layer 34 that are blown off by this ion beam etching reattach to the sidewalls of the electrode strips 39 surrounding this portion of the seed layer 34, thereby increasing the widths of the electrode strips 39 by the size of this reattached part 39 a.

Then, the dielectric slurry application, thermosetting annealing treatment, and insulation layer 42 formation are carried out in accordance with the same steps as in the first embodiment. As a result of this, as shown in FIG. 22, a ceramic dielectric member (a second ceramic dielectric member) 41 comprising dielectric strips 41 a formed in the gap G between the electrode strips 39 is formed. In other words, dielectric strips 41 a of a ceramic dielectric member 41 are interposed between the adjacent electrode strips 39 of the pair of internal electrodes 38 a, 38 b, 38 c, and the electrode strips 39 and dielectric strips 41 a alternately overlap in the surface direction of the substrate 10. Furthermore, since the dielectric slurry does not accumulate in the gap g between internal electrode 38 b and internal electrode 38 c, this gap g is maintained empty as-is.

Next, as shown in FIG. 22, an Al₂O₃ insulation layer 42 having a thickness of between 0.2 and 0.5 μm is formed on the plated layer 38 comprising the internal electrodes 38 a, 38 b, 38 c. The Al₂O₃ fills up the gap g between internal electrode 38 b and internal electrode 38 c at this time.

In actuality, a plurality of stacked members having the same structure as the structure of the stacked member L obtained through the processes explained above is parallelly formed on a single substrate. For this reason, at the time the insulation layer 42 is formed, the stacked member L is linked on both sides to similarly structured stacked members L1, L2 on top of a single substrate 10.

Accordingly, cutting both ends of stacked member L together with the substrate 10 exposes the end faces of the first-tier internal electrodes 18 a, 18 b, 18 c and the end faces of the second-tier internal electrodes 38 a, 38 b, 38 c at the respective end faces (cutting faces) S1, S2 on opposite sides of stacked member L. That is, the end face of internal electrode 18 a is exposed at the one end face S1 of the stacked member L, and the end face of internal electrode 38 b is exposed at the other end face S2 of the stacked member L.

Finally, as shown in FIG. 13, a pair of external electrodes 24A, 24B is formed so as to connect to the dual pair of internal electrodes 18 a, 18 b, 18 c, 38 a, 38 b, 38 c, completing the manufacture of the ceramic capacitor 1B related to the second embodiment. Of the pair of external electrodes 24A, 24B, external electrode 24A, which functions as the anode, is formed by the plating of the end face S1 of the stacked member L, and is electrically connected to the exposed anode 18 a, thereby achieving conduction between anodes 18 a and 38 a. Conversely, external electrode 24B, which functions as the cathode, is formed by the plating of end face S2 of the stacked member L, and is electrically connected to the cathode electrode 38 b, thereby achieving conduction between cathodes 18 b, 38 b.

The ceramic capacitor 1B manufactured in accordance with the above-described manufacturing method realizes the effect of the ceramic capacitor 1A explained in detail in the first embodiment, and, additionally, realizes an increase in capacitance in line with making the internal electrodes a two-tiered configuration.

Furthermore, first-tier internal electrode 18 c and second-tier internal electrode 38 c of the second embodiment are not connected to electrode strips 19, 39. These internal electrodes 18 c, 38 c function as raised parts that uniformly maintain the height of the plated layers 18B, 38 over the entire device. That is, in a case where these internal electrodes 18 c, 38 c are not formed, the planarity of the plated layers 18B, 38 degenerates, causing the precision of the patterning to deteriorate during the manufacturing processes. In particular, preferably the first-tier internal electrode 18 c should be formed beforehand to ensure the planarity of the second-tier internal electrodes 38 a, 38 b, 38 c.

The present invention is not limited to the above embodiments, and various changes are possible. For example, the ceramic capacitor described in the second embodiment, in which the ceramic capacitor described in the first embodiment further comprises a structural member that comprises an insulation layer, a second internal electrode and a second ceramic dielectric member, was described, but a mode for a multi-layered ceramic capacitor comprising a plurality of structural members like this is also possible. Consequently, the capacitance of the ceramic capacitor increases yet further due to the increased number of internal electrodes and surface area. At manufacturing time, the step of sequentially forming the insulation layer, the second seed layer and the second thick-film masking layer, the step of forming the second internal electrode, the step of removing the second thick-film mask, and the step of filling the second ceramic dielectric will by repeated a plurality of times.

Further, only a ceramic capacitor manufacturing method for forming a Ni internal electrode was described, but another plating material, for example, any of Cu, Cr and Ru, may be used instead. 

1. A ceramic capacitor comprising: a pair of first internal electrodes, which are arranged, on a substrate, perpendicularly to a surface of the substrate, and which interdigitate via a prescribed gap; a first ceramic dielectric member, which fills the gap between the pair of first internal electrodes; and a pair of external electrodes, which are connected to the pair of first internal electrodes.
 2. The ceramic capacitor according to claim 1, further comprising: an insulation layer formed on the first internal electrode; a pair of second internal electrodes, which are arranged on the insulation layer perpendicularly to the substrate surface, and which interdigitate intermesh via a prescribed gap; and a second ceramic dielectric member, which fills the gap between the pair of second internal electrodes, wherein one of the pair of external electrodes is connected to the first internal electrodes and the other one of the pair of external electrodes is connected to the second internal electrodes.
 3. The ceramic capacitor according to claim 2, comprising: a plurality of structural members including the insulation layer, the second internal electrodes and the second ceramic dielectric member.
 4. The ceramic capacitor according to claim 1, wherein branch parts, which extend from the one of the pair of internal electrodes toward the other one of the pair of internal electrodes to interdigitate, are formed on mutually opposing surfaces of the pair of internal electrodes.
 5. A ceramic capacitor manufacturing method comprising the steps of: forming a first thick-film mask of a prescribed pattern on a surface of a substrate on which a first seed layer is formed; plating the first seed layer and forming, on the portion of the first seed layer that is exposed through the first thick-film mask, an interdigitated pair of first internal electrodes extending in a thickness direction of the substrate; removing the first thick-film mask; filling a first ceramic dielectrics member into a gap between the pair of first internal electrodes formed by removing the first thick-film mask; and forming a pair of external electrodes, which are connected to the pair of first internal electrodes.
 6. The ceramic capacitor manufacturing method according to claim 5, further comprising the steps of: forming an insulation layer, a second seed layer and a second thick-film masking layer of a prescribed pattern sequentially on the first internal electrodes, subsequent to the step of filling the gap with the first ceramic dielectric member; plating the second seed layer and forming, on the portion of the second seed layer that is exposed through the second thick-film mask, an interdigitated pair of second internal electrodes extending substantially perpendicular to a surface of the substrate; removing the second thick-film mask; and filling the second ceramic dielectric member into the gap between the pair of the second internal electrodes formed by removing the second thick-film mask, wherein the pair of external electrodes are formed so as to be connected to the first internal electrodes and the second internal electrodes.
 7. The ceramic capacitor manufacturing method according to claim 6, wherein the step of forming the insulation layer, the second seed layer and the second thick-film masking layer of a prescribed pattern sequentially, the step of forming the second internal electrodes, the step of removing the second thick-film mask, and the step of filling the gap with the second ceramic dielectric member are repeated a plurality of times to achieve multi-layering.
 8. The ceramic capacitor manufacturing method according to claim 5, wherein the plating material used in the step of forming the internal electrodes is any of Ni, Cu, Cr and Ru.
 9. The ceramic capacitor manufacturing method according to claim 5, further comprising the step of increasing the width of the internal electrodes.
 10. The ceramic capacitor manufacturing method according to claim 9, wherein, as the step of increasing the width of the internal electrodes, the seed layer material exposed in the gap between the internal electrodes is reattached to side surfaces of the internal electrodes in by ion-beam etching.
 11. The ceramic capacitor manufacturing method according to claim 9, wherein as the step of increasing the width of the internal electrodes, the internal electrodes are re-plated.
 12. The ceramic capacitor manufacturing method according to claim 5, wherein branch parts, which extend from one of the pair of internal electrodes toward the other one of the pair of internal electrodes to interdigitate, are formed on mutually opposing surfaces of the pair of internal electrodes. 